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| STS01DTP06 DUAL NPN-PNP COMPLEMENTARY BIPOLAR TRANSISTOR PRELIMINARY DATA Table 1: General Features VCE(sat) 0.35 V n n n n Figure 1: Package IC 1A hFE > 100 HIGH GAIN LOW VCE(sat) SIMPLIFIED CIRCUIT DESIGN REDUCED COMPONENT COUNT APPLICATION n PUSH-PULL OR TOTEM-POLE CONFIGURATION n MOSFET AND IGBT GATE DRIVING n MOTOR, RELAY AND SOLENOID DRIVING SO-8 DESCRIPTION The STS01DTP06 is a Hybrid dual NPN-PNP complementary power bipolar transistor manufactured by using the latest low voltage planar technology. The STS01DTP06 is housed in dual island SO-8 package with separated terminals for higher assembly flexibility, specifically recommended to be used in Push-Pull or Totem Pole configuration as post IGBTs and MOSFETs driver. Figure 2: Internal Schematic Diagram Table 2: Order Codes Part Number STS01DTP06T4 Marking S01DTP06 Package SO-8 Packaging Tape & Reel April 2005 Rev. 1 1/8 STS01DTP06 Table 3: Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot Ptot Tstg TJ Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC= 0) Collector Current Collector Peak Current (tp < 5ms) Base Current Base Peak Current (tp < 1ms) Total Dissipation at TC = 25 C single Total Dissipation at TC = 25 C couple Storage Temperature Max. Operating Junction Temperature o o NPN 60 30 5 3 6 1 2 2 1.6 -65 to 150 150 PNP -60 -30 -5 -3 -6 -1 -2 Unit V V V A A A A W W C C For PNP type voltage and current values are negative. Table 4: Thermal Data Symbol Parameter Max Max 62.5 78 Unit oC/W o Rthj-amb(1) Thermal Resistance Junction-ambient (Single Operation) (1) Thermal Resistance Junction-ambient R thj-amb C/W (Dual Operation) (1) When mounted on 1 inch square pad of 2 oz. copper, t 10 sec Table 5: Q1-NPN Transistor Electrical Characteristics (Tcase = 25 oC unless otherwise specified) Symbol ICBO ICEO IEBO (IE = 0) Collector Cut-off Current (IB = 0) Emitter Cut-off Current (IC = 0) V(BR)CEO* Collector-Emitter Breakdown Voltage (IB = 0) VCE(sat) VBE(sat) hFE* * Parameter Collector Cut-off Current VCB = 60 V VCE = 30 V VEB = 5 V IC = 10 mA Test Conditions Min. Typ. Max. 0.1 1 1 Unit A A A V 30 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain IC = 1 A IC = 2 A IC = 1 A IC = 1 A IC = 3 A IB = 10 mA IB = 100 mA IB = 10 mA VCE = 2 V VCE = 2 V 100 30 0.35 0.85 1 0.7 1.1 V V V * * Pulsed: Pulsed duration = 300 ms, duty cycle 1.5 %. 2/8 STS01DTP06 Table 6: Q2-PNP Transistor Electrical Characteristics (Tcase = 25 oC unless otherwise specified) Symbol ICBO ICEO IEBO (IE = 0) Collector Cut-off Current (IB = 0) Emitter Cut-off Current (IC = 0) V(BR)CEO* Collector-Emitter Breakdown Voltage (IB = 0) VCE(sat) VBE(sat) hFE* * Parameter Collector Cut-off Current Test Conditions VCB = -60 V VCE = -30 V VEB = -5 V IC = -10 mA Min. Typ. Max. -0.1 -1 -1 Unit A A A V -30 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain IC = -1 A IC = -2 A IC = -1 A IC = -1 A IC = -3 A IB = -10 mA IB = -100 mA IB = -10 mA VCE = -2 V VCE = -2 V 100 30 -0.35 -0.85 -1 -0.7 -1.1 V V V * * Pulsed: Pulsed duration = 300 ms, duty cycle 1.5 %. Figure 3: Reverse Biased Area Q1 NPN Transistor Figure 4: DC Current Gain Q1 NPN Transistor 3/8 STS01DTP06 Figure 5: DC Current Gain Q1 NPN Transistor Figure 8: Collector-Emitter Saturation Voltage Q1 NPN Transistor Figure 6: Base-Emitter Saturation Voltage Q1 NPN Transistor Figure 9: Reverse Biased Area Q2 PNP Transistor Figure 7: DC Current Gain Q2 PNP Transistor Figure 10: DC Current Gain Q2 PNP Transistor 4/8 STS01DTP06 Figure 11: Collector-Emitter Saturation Voltage Q2 PNP Transistor Figure 12: Base-Emitter Saturation Voltage Q2 PNP Transistor Figure 13: Typical Application 5/8 STS01DTP06 Table 7: Revision History Version 22-Apr-2005 Release Date 1 First Release. Change Designator 6/8 STS01DTP06 SO-8 MECHANICAL DATA DIM. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm. MIN. TYP MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 7/8 STS01DTP06 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 8/8 |
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